A monolithic integrated 18 Push - Push
نویسنده
چکیده
A fully integrated single-ended output pushpush oscillator is realized using an advanced 0.2μm SiGe HBT process. Up to –5 dBm output power is achieved at 180 GHz using a technology with a transition frequency fT of 200 GHz and maximum oscillation frequency fMAX of 275 GHz. Preliminary phase noise measurements show a phase noise of less than –90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.
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